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We offer the perfect choice for those who are working in or looking for a review example. Journal Paper review. This paper is about the use of ferroelectric materials in memory devices (ferroelectric random access memory-FRAM) where Secure, high speed, and low power consumption non-volatile memories are required.. Because of ideal memory properties, such as very low power consumption and high‑speed read/write performance, FRAM has been applied to LSIs (Large-Scale Integration) for IC cards, RFID tags, smart cards, and for alternate memory addressing with battery backup.
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